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 High Power SPDT Switch
CXG1189UR
Description
The CXG1189UR is a high power SPDT (Single Pole Dual Throw) switch MMIC used in wireless communication systems, for example, GSM handsets, GSM/UMTS dual mode handsets. The Sony JPHEMT process is used for low insertion loss. (Applications: Antenna switch for cellular handsets, GSM, GSM/UMTS dual mode)
Features
Low insertion loss: 0.2dB@900MHz, 0.25dB@1.8GHz, 0.3dB@2.17GHz Low harmonics level: -35dBm (Max.)
Package
Small package size: 12-pin UQFN
Structure
GaAs JPHEMT MMIC
Absolute Maximum Ratings
(Ta = 25C) Control voltage Input power max. [824 to 915MHz] Input power max. [1710 to 1910MHz] Input power max. [1920 to 1980MHz] Operating temperature Storage temperature Topr Tstg Vctl 5 37 35 33 -35 to +85 -60 to +150 V dBm dBm dBm
C C
This IC is ESD sensitive device. Special handling precautions are required. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
-1-
E05305-PS
CXG1189UR
Block Diagram and Recommended Circuit
RF1
GND CRF
GND
6
5
4
GND
7
3
GND
F1 RF2 CRF F3 8
F2 2 CRF F4 RF3
GND
9
1
GND
10 Cbypass (100pF)
11
12 Cbypass (100pF) Rctl (1k)
Rctl (1k)
CTLA
GND
CTLB
When using this IC, the following external components should be used: Rctl: This resistor is used to improve ESD performance. 1k is recommended CRF: This capacitor is used for RF decoupling and must be used for all applications. Cbypass: This capacitor is used for DC line filtering. 100pF is recommended.
Truth Table
CTLA L H CTLB H L ON State RF1 - RF2 RF1 - RF3 F1 ON OFF F2 OFF ON F3 OFF ON F4 ON OFF
DC Bias Condition
(Ta = 25C) Item Vctl (H) Vctl (L) Min. 2.6 0 Typ. 2.8 -- Max. 3.6 0.4 Unit V V
-2-
CXG1189UR
Electrical Characteristics
(Ta = 25C) Item Symbol Path Condition 824 to 960MHz RF1 - RF2 Insertion loss IL RF1 - RF3 1710 to 1990MHz 1920 to 2170MHz 824 to 960MHz 1710 to 1990MHz 1920 to 2170MHz 824 to 960MHz RF1 - RF2 Isolation ISO. RF1 - RF3 1710 to 1990MHz 1920 to 2170MHz 824 to 960MHz 1710 to 2170MHz 1920 to 2170MHz 824 to 960MHz VSWR VSWR 1710 to 2170MHz 1920 to 2170MHz 2fo 3fo Harmonics*1 2fo 3fo 2fo 3fo RF1 - RF2 RF1 - RF3 RF1 - RF2 RF1 - RF3 RF1 - RF2 RF1 - RF3 RF1 - RF2 RF1 - RF3 P1dB compression input power P1dB RF1 - RF2 RF1 - RF3 RF1 - RF2 RF1 - RF3 Control current Ictl 824 to 915MHz Vctl = 2.8/0V 1710 to 1910MHz Vctl = 2.8/0V 1920 to 1980MHz Vctl = 2.8/0V 824 to 915MHz Vctl = 2.8/0V 1710 to 1910MHz Vctl = 2.8/0V 1920 to 1980MHz Vctl = 2.8/0V Vctl = 2.8V 37 34 32 2 6 25 25 25 25 25 25 Min. Typ. 0.20 0.25 0.30 0.20 0.25 0.30 32 31 30 32 31 30 1.2 1.2 1.2 -39 -40 -38 -37 -38 -42 -35 -35 -35 -35 -35 -35 Max. 0.30 0.35 0.40 0.30 0.35 0.40 Unit dB dB dB dB dB dB dB dB dB dB dB dB -- -- -- dBm dBm dBm dBm dBm dBm dBm dBm dBm A
Electrical characteristics are measured with all RF ports terminated in 50.
*1
Harmonics measured with Tx inputs harmonically matched. The use of harmonic matching is recommended to ensure optimum performance. 1. Power incident on Tx, Pin = 34dBm, 824 to 915MHz, Vctl (H) = 2.8V, Vctl (L) = 0V 2. Power incident on Tx, Pin = 32dBm, 1710 to 1910MHz, Vctl (H) = 2.8V, Vctl (L) = 0V 3. Power incident on Tx, Pin = 29dBm, 1920 to 1980MHz, Vctl (H) = 2.8V, Vctl (L) = 0V
-3-
CXG1189UR
Package Outline
(Unit: mm)
12PIN UQFN (PLASTIC)
x4 0.1 2.0 0.55 0.05 0.4 0.1 0.6 9 10 7 6 2.0
0.
S
A-B
C
4-R0.2
C B
A
12 1 3
4
0.4 PIN 1 INDEX 0.18 0.07 0.25 0.05 M S A-B C
0.14
26
0.05
S
S
Solder Plating + 0.09 0.14 - 0.03 + 0.09 0.25 - 0.03
MAX0.02
SPEC. 5-18m
S
TERMINAL SECTION
Note:Cutting burr of lead are 0.05mm MAX.
SONY CODE EIAJ CODE JEDEC CODE UQFN-12P-01
PACKAGE STRUCTURE
PACKAGE MATERIAL LEAD TREATMENT LEAD MATERIAL PACKAGE MASS EPOXY RESIN SOLDER PLATING COPPER ALLOY 0.01g
LEAD PLATING SPECIFICATIONS ITEM LEAD MATERIAL SOLDER COMPOSITION PLATING THICKNESS
COPPER ALLOY Sn-Bi Bi:1-4wt%
-4-
Sony Corporation


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